Barrier Potential | Barrier potential of Silicon and Germanium | Barrier potential of Diode

Опубликовано: 01 Январь 1970
на канале: YuvaTeck
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#barrier potential
#barrier potential of Silicon and Germanium
#Barrier potential of PN Junction diode
#barrier potential of silicon
#barrier potential of germanium
#barrier potential of pn junction diode


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In the last lecture we discussed how the depletion layer is formed. Also, we gathered knowledge on width of the depletion region.
Once pn junction is formed and depletion layer created, the diffusion of free electrons stops. In
other words, the depletion region acts as a barrier to the further movement of free electrons across the junction. The positive and negative charges set up an electric field. This is shown in figure.
The electric field is a barrier to the free electrons in the n-region. There exists a potential
difference across the depletion layer and is called barrier potential.
The barrier potential of a pn junction depends upon several factors including the type of semiconductor material, the amount of doping and temperature. The typical barrier potential is approximately: For silicon is 0.7 V ; For germanium, it is 0.3 V.

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